Study of a Length Coefficient for an Extended...

Japanese Journal of Applied Physics 1996 / 11 Vol. 35; Iss. Part 2, No

Study of a Length Coefficient for an Extended Drift-Diffusion Model for Metal-Oxide-Semiconductor (MOS) Device Simulation

Sonoda, Ken-ichiro, Kanno, Koji, Taniguchi, Kenji
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Volume:
35
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.35.L1398
Date:
November, 1996
File:
PDF, 487 KB
1996
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