Investigation of Switching Kinetics of Interface Traps in...

Japanese Journal of Applied Physics 2002 / 4 Vol. 41; Iss. Part 1, No

Investigation of Switching Kinetics of Interface Traps in Metal-Oxide-Semiconductor-Field-Effect-Transistors with Ultra-narrow Channels

Shi, Yi, Shen, Bo, Bu, Huiming, Yuan, Xiaoli, Gu, Shulin, Han, Ping, Zhang, Rong, Zheng, Youdou
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Volume:
41
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.41.2363
Date:
April, 2002
File:
PDF, 176 KB
english, 2002
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