Post-Annealing Effects on Fixed Charge and Slow/Fast...

Japanese Journal of Applied Physics 2003 / 3 Vol. 42; Iss. Part 1, No

Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al 2 O 3 /p-Si Metal–Oxide–Semiconductor Capacitor

Jeon, In Sang, Park, Jaehoo, Eom, Dail, Hwang, Cheol Seong, Kim, Hyeong Joon, Park, Chan Jin, Cho, Hoon Young, Lee, Jong-Ho, Lee, Nae-In, Kang, Ho-Kyu
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Volume:
42
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.42.1222
Date:
March, 2003
File:
PDF, 549 KB
english, 2003
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