Frequency Dependence of Drain Conductance due to Hole...

Japanese Journal of Applied Physics 2006 / 6 Vol. 45; Iss. 6A

Frequency Dependence of Drain Conductance due to Hole Accumulation in InAlAs/InGaAs High Electron Mobility Transistors

Taguchi, Hirohisa, Kawaguchi, Masamoto, Hayakawa, Maki, Nakamura, Yuki, Iida, Tsutomu, Takanashi, Yoshifumi
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Volume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.45.4960
Date:
June, 2006
File:
PDF, 260 KB
english, 2006
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