Layout Dependent Induced Leakage and its Prevention with Different Shallow Trench Isolation Schemes in 0.18 µm Dual Gate Complementary Metal Oxide Semiconductor Technology
Mun, Seong Yeol, Shin, Kyeong Cheol, Huh, Sang Bum, Ju, Je Il, Kim, Jae Yeong, Kim, Dae Byung, Kang, Seong Jun, Jeong, Yang HeeVolume:
46
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.46.375
Date:
January, 2007
File:
PDF, 466 KB
english, 2007