Influence of Carbon in In-situ...

Japanese Journal of Applied Physics 2010 / 4 Vol. 49; Iss. 4

Influence of Carbon in In-situ Carbon-Doped SiGe Films on Si(001) Substrates on Epitaxial Growth Characteristics

Oomae, Hiroto, Itokawa, Hiroshi, Mizushima, Ichiro, Nakamura, Shinichi, Uchitomi, Naotaka
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Volume:
49
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.49.04DA07
Date:
April, 2010
File:
PDF, 144 KB
english, 2010
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