Si Damage Due to Oblique-Angle Ion Impact Relevant for...

Japanese Journal of Applied Physics 2012 / 8 Vol. 51

Si Damage Due to Oblique-Angle Ion Impact Relevant for Vertical Gate Etching Processes

Ito, Tomoko, Karahashi, Kazuhiro, Mizotani, Kohei, Isobe, Michiro, Kang, Song-Yun, Honda, Masanobu, Hamaguchi, Satoshi
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Volume:
51
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.51.08HB01
Date:
August, 2012
File:
PDF, 739 KB
english, 2012
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