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Dependence of ultra-thin SiO2 layers formation by ultra-slow single and multicharged ions on process conditions
G Borsoni, V Le Roux, R Laffitte, S Kerdilès, N Béchu, L Vallier, M.L Korwin-Pawlowski, C Vannuffel, F Bertin, C Vergnaud, A Chabli, C WyonVolume:
59
Year:
2001
Language:
english
Pages:
5
DOI:
10.1016/s0167-9317(01)00615-3
File:
PDF, 314 KB
english, 2001