Transient effects in PD SOI NMOSFETs

Microelectronic Engineering 2001 Vol. 59; Iss. 1-4

Transient effects in PD SOI NMOSFETs

S Okhonin, M Nagoga, J.-M Sallese, P Fazan, O Faynot, J Pontcharra, S Cristoloveanu
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Volume:
59
Year:
2001
Language:
english
Pages:
5
DOI:
10.1016/s0167-9317(01)00645-1
File:
PDF, 515 KB
english, 2001
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