Formation of stacking faults in nitrogen-doped silicon...

Microelectronic Engineering 2003 Vol. 66; Iss. 1-4

Formation of stacking faults in nitrogen-doped silicon single crystals

W.v Ammon, R Hölzl, T Wetzel, D Zemke, G Raming, M Blietz
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Volume:
66
Year:
2003
Language:
english
Pages:
13
DOI:
10.1016/s0167-9317(02)00910-3
File:
PDF, 503 KB
english, 2003
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