Calculations of Energy Levels of Oxygen and Silicon...

Japanese Journal of Applied Physics 1973 / 1 Vol. 12; Iss. 1

Calculations of Energy Levels of Oxygen and Silicon Vacancies at the Si-SiO 2 Interface

Iizuka, Tetsuya, Sugano, Takuo
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Volume:
12
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.12.73
Date:
January, 1973
File:
PDF, 767 KB
1973
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