Etching of SiO 2 in CF...

Japanese Journal of Applied Physics 1981 / 3 Vol. 20; Iss. 3

Etching of SiO 2 in CF 4 Gas Plasma Using Planar-Type Reactor

Toyoda, Hiroyasu, Itakura, Hideaki, Komiya, Hiroyoshi
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Volume:
20
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.20.667
Date:
March, 1981
File:
PDF, 1.11 MB
english, 1981
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