The Growth of Single Crystal of 3C-SiC on the Si Substrate...

Japanese Journal of Applied Physics 1986 / 9 Vol. 25; Iss. Part 1, No

The Growth of Single Crystal of 3C-SiC on the Si Substrate by the MBE Method Using Multi Electron Beam Heating

Kaneda, Shigeo, Sakamoto, Yoshiki, Nishi, Chikara, Kanaya, Masatoshi, Hannai, Sei-ichi
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Volume:
25
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.25.1307
Date:
September, 1986
File:
PDF, 117 KB
english, 1986
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