Generation Mechanism of Tensile Stress in a-Si...

Japanese Journal of Applied Physics 1992 / 11 Vol. 31; Iss. Part 2, No

Generation Mechanism of Tensile Stress in a-Si 1- x N x :H Films Prepared by Afterglow Plasma Chemical Vapor Deposition Technique

Nagayoshi, Hiroshi, Hoe, Wong Chee, Ueno, Tomo, Kamisako, Koichi, Kuroiwa, Koichi, Shimada, Toshikazu, Tarui, Yasuo
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Volume:
31
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.31.L1628
Date:
November, 1992
File:
PDF, 1.14 MB
1992
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