Enhancement of Nitrogen Incorporation in ZnSe Grown on...

Japanese Journal of Applied Physics 1994 / 3 Vol. 33; Iss. Part 2, No

Enhancement of Nitrogen Incorporation in ZnSe Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy

Nishikawa, Yukie, Ishikawa, Masayuki, Saito, Shinji, Hatakoshi, Gen-ichi
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Volume:
33
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.33.L361
Date:
March, 1994
File:
PDF, 1.17 MB
english, 1994
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