Improvement of Gate-Insulator/Silicon Interface...

Japanese Journal of Applied Physics 1994 / 6 Vol. 33; Iss. Part 2, No

Improvement of Gate-Insulator/Silicon Interface Characteristics in Amorphous Silicon Thin Film Transistors

Sameshima, Toshiyuki, Kohno, Atsusi, Sekiya, Mitsunobu, Hara, Masaki, Sano, Naoki
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Volume:
33
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.33.L834
Date:
June, 1994
File:
PDF, 1012 KB
english, 1994
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