Experimental study on isolation edge effects in the short channel characteristics of metal oxide semiconductor field effect transistors (MOSFETs)
Toshiyuki Oishi, Katsuomi Shiozawa, Akihiko Furukawa, Yuji Abe, Yasunori Tokuda, Shinichi SatohVolume:
45
Year:
1999
Language:
english
Pages:
7
DOI:
10.1016/s0167-9317(99)00254-3
File:
PDF, 265 KB
english, 1999