Study of 4.5 kV MOS-Power Device with Injection-Enhanced...

Japanese Journal of Applied Physics 1997 / 3 Vol. 36; Iss. Part 1, No

Study of 4.5 kV MOS-Power Device with Injection-Enhanced Trench Gate Structure

Kitagawa, Mitsuhiko, Nakagawa, Akio
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Volume:
36
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.36.1411
Date:
March, 1997
File:
PDF, 513 KB
1997
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