Self-Aligned 10-nm Barrier Layer Formation Technology for...

Japanese Journal of Applied Physics 1998 / 6 Vol. 37; Iss. Part 1, No

Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization Metal-Oxide-Semiconductor Field-Effect-Transistor

Matsuhashi, Hideki, Gotoh, Akio, Lee, Chang-Hun, Yokoyama, Michio, Masu, Kazuya, Tsubouchi, Kazuo
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Volume:
37
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.37.3264
Date:
June, 1998
File:
PDF, 1.38 MB
1998
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