Capacitance-Voltage Characteristics of SiO 2 Films Prepared...

Japanese Journal of Applied Physics 1998 / 10 Vol. 37; Iss. Part 2, No

Capacitance-Voltage Characteristics of SiO 2 Films Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition as a Function of O 2 Content and Microwave Power

Kang, Moonsang, Koo, Yongseo, An, Chul
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Volume:
37
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.37.L1244
Date:
October, 1998
File:
PDF, 94 KB
english, 1998
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