Low-Damage Gate Etching with High Degree of Anisotropy in High-Density DRAM Cell
Kim, Il-Gweon, Kim, Nam-Sung, Park, Joo-Seog, Park, Dae-YoungVolume:
41
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.41.2380
Date:
April, 2002
File:
PDF, 517 KB
english, 2002