Consideration of Performance Limitation of Sub-100-nm...

Japanese Journal of Applied Physics 2002 / 10 Vol. 41; Iss. Part 2, No

Consideration of Performance Limitation of Sub-100-nm Double-Gate Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)

Yanagi, Shin-ichiro, Omura, Yasuhisa
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Volume:
41
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.41.L1096
Date:
October, 2002
File:
PDF, 70 KB
english, 2002
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