Preparation of Wide-Gap Hydrogenated Amorphous Silicon...

Japanese Journal of Applied Physics 2003 / 1 Vol. 42; Iss. Part 2, No

Preparation of Wide-Gap Hydrogenated Amorphous Silicon Carbide Thin Films by Hot-Wire Chemical Vapor Deposition at a Low Tungsten Temperature

Tabata, Akimori, Nakajima, Takayuki, Mizutani, Teruyoshi, Suzuoki, Yasuo
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Volume:
42
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.42.L10
Date:
January, 2003
File:
PDF, 156 KB
english, 2003
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