The effects of Ge content in poly-Si1−xGex gate material on...

Microelectronic Engineering 1999 Vol. 48; Iss. 1-4

The effects of Ge content in poly-Si1−xGex gate material on the tunneling barrier in PMOS devices

A Shanware, H.Z Massoud, A Acker, V.Z.-Q Li, M.R Mirabedini, K Henson, J.R Hauser, J.J Wortman
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
48
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0167-9317(99)00333-0
File:
PDF, 276 KB
english, 1999
Conversion to is in progress
Conversion to is failed