Reliability of ultra-thin gate oxides grown in low-pressure N2O ambient or on nitrogen-implanted silicon
A.J. Bauer, M. Beichele, M. Herden, H. RysselVolume:
48
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0167-9317(99)00338-x
File:
PDF, 342 KB
english, 1999