Novel 2-Bit/Cell Metal–Oxide–Nitride–Oxide–Semiconductor...

Japanese Journal of Applied Physics 2005 / 7 Vol. 44; Iss. 7A

Novel 2-Bit/Cell Metal–Oxide–Nitride–Oxide–Semiconductor Memory Device with Wrapped-Control-Gate Structure That Achieves Source-Side Hot-Electron Injection

Tomiye, Hideto, Terano, Toshio, Nomoto, Kazumasa, Kobayashi, Toshio
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Volume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.4825
Date:
July, 2005
File:
PDF, 437 KB
english, 2005
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