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Dependence of gate oxide integrity on grown-in defect density in Czochralski grown silicon
U. Lambert, A. Huber, J. Grabmeier, G. Obermeier, J. Vanhellemont, R. Wahlich, G. KissingerVolume:
48
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0167-9317(99)00353-6
File:
PDF, 293 KB
english, 1999