Area-Selective Post-Deposition Annealing Process Using...

Japanese Journal of Applied Physics 2006 / 4 Vol. 45; Iss. 4B

Area-Selective Post-Deposition Annealing Process Using Flash Lamp and Si Photoenergy Absorber for Metal/High- k Gate Metal–Insulator–Semiconductor Field-Effect Transistors with NiSi Source/Drain

Matsuki, Takeo, Nishimura, Isamu, Akasaka, Yasushi, Hayashi, Kiyoshi, Noguchi, Masataka, Yamashita, Koji, Torii, Kazuyoshi, Kasai, Naoki, Nara, Yasuo
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Volume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.45.2939
Date:
April, 2006
File:
PDF, 462 KB
english, 2006
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