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Interfacial Reaction of TiN/HfSiON Gate Stack in High-Temperature Annealing for Gate-First Metal–Oxide–Semiconductor Field-Effect Transistors
Matsuki, Takeo, Inumiya, Seiji, Mise, Nobuyuki, Eimori, Takahisa, Nara, YasuoVolume:
46
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.46.1921
Date:
April, 2007
File:
PDF, 163 KB
english, 2007