Diffusion Model of Gallium in Single-Crystal ZnO Proposed from Analysis of Concentration-Dependent Profiles Based on the Fermi-Level Effect
Nakagawa, Tsubasa, Sakaguchi, Isao, Uematsu, Masashi, Sato, Yoshiyuki, Ohashi, Naoki, Haneda, Hajime, Ikuhara, YuichiVolume:
46
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.46.4099
Date:
July, 2007
File:
PDF, 185 KB
english, 2007