Excess Carrier Lifetime in a Bulk p-Type 4H–SiC Wafer...

Japanese Journal of Applied Physics 2007 / 8 Vol. 46; Iss. 8A

Excess Carrier Lifetime in a Bulk p-Type 4H–SiC Wafer Measured by the Microwave Photoconductivity Decay Method

Kato, Masashi, Kawai, Masahiko, Mori, Tatsuhiro, Ichimura, Masaya, Sumie, Shingo, Hashizume, Hidehisa
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Volume:
46
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.46.5057
Date:
August, 2007
File:
PDF, 592 KB
english, 2007
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