Chemical studies of CVD Cu deposited on Ta and TaN barriers...

Microelectronic Engineering 2000 Vol. 50; Iss. 1-4

Chemical studies of CVD Cu deposited on Ta and TaN barriers under various process conditions

Steve Voss, Srinivas Gandikota, Liang-Yuh Chen, Rong Tao, Dennis Cong, Alain Duboust, Naomi Yoshida, Sesh Ramaswami
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Volume:
50
Year:
2000
Language:
english
Pages:
8
DOI:
10.1016/s0167-9317(99)00383-4
File:
PDF, 1.49 MB
english, 2000
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