Effect of p–n Junction Location on Characteristics of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
Wang, Lai, Li, Hongtao, Xi, Guangyi, Jiang, Yang, Zhao, Wei, Han, Yanjun, Luo, YiVolume:
47
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.47.7101
Date:
September, 2008
File:
PDF, 300 KB
english, 2008