Dual-Sublattice Modeling and Semi-Atomistic Simulation of...

Japanese Journal of Applied Physics 2009 / 3 Vol. 48; Iss. 3

Dual-Sublattice Modeling and Semi-Atomistic Simulation of Boron Diffusion in 4H-Silicon Carbide

Mochizuki, Kazuhiro, Shimizu, Haruka, Yokoyama, Natsuki
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Volume:
48
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.48.031205
Date:
March, 2009
File:
PDF, 263 KB
english, 2009
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