Modeling the trends in valence-band electron tunneling in...

Microelectronic Engineering 1999 Vol. 48; Iss. 1-4

Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2Ta2O5 dielectrics with oxide scaling

A. Shanware, H.Z. Massoud, E. Vogel, K. Henson, J.R. Hauser, J.J. Wortman
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Volume:
48
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0167-9317(99)00392-5
File:
PDF, 290 KB
english, 1999
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