Effect of Channel Layer Thickness on Characteristics and...

Japanese Journal of Applied Physics 2011 / 2 Vol. 50; Iss. 2

Effect of Channel Layer Thickness on Characteristics and Stability of Amorphous Hafnium–Indium–Zinc Oxide Thin Film Transistors

Kim, Sun-Jae, Lee, Soo-Yeon, Lee, Young-Wook, Lee, Woo-Geun, Yoon, Kap-Soo, Kwon, Jang-Yeon, Han, Min-Koo
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Volume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.50.024104
Date:
February, 2011
File:
PDF, 238 KB
english, 2011
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