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Improvement in the Property of Field Effect Transistor Having the HfO 2 /Ge Structure Fabricated by Photoassisted Metal Organic Chemical Vapor Deposition with Fluorine Treatment
Lee, DongHun, Imajo, Hideto, Kanashima, Takeshi, Okuyama, MasanoriVolume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.50.04DA11
Date:
April, 2011
File:
PDF, 495 KB
english, 2011