Unipolar Ni/GeO$_{x}$/PbZr$_{0.5}$Ti$_{0.5}$O$_{3}$/TaN Resistive Switching Memory
Chou, Kun-I, Cheng, Chun-Hu, Chen, Po-Chun, Yeh, Fon-Shan, Chin, AlbertVolume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.50.121801
Date:
November, 2011
File:
PDF, 639 KB
english, 2011