Splitting and electrical properties of the SOI structure formed from the heavily boron doped silicon with using of the smart-cut technology
I.V. Antonova, V.P. Popov, V.F. Stas, A.K. Gutakovskii, A.E. Plotnikov, V.I. ObodnikovVolume:
48
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0167-9317(99)00411-6
File:
PDF, 356 KB
english, 1999