Passivation of 4H-SiC/SiO2 Interface Traps by Oxidation of...

Materials Science Forum 2015 / 6 Vol. 821-823

Passivation of 4H-SiC/SiO2 Interface Traps by Oxidation of a Thin Silicon Nitride Layer

Mikhaylov, A.I., Afanasyev, Alexey V., Luchinin, Victor V., Reshanov, S.A., Schöner, Adolf, Knoll, Lars, Minamisawa, Renato Amaral, Alfieri, Giovanni, Bartolf, Holger
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
821-823
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.821-823.508
Date:
June, 2015
File:
PDF, 453 KB
english, 2015
Conversion to is in progress
Conversion to is failed