RF characteristics for 4H-SiC MESFET with a clival gate

Materials Science in Semiconductor Processing 2015 / 12 Vol. 40

RF characteristics for 4H-SiC MESFET with a clival gate

Jia, Hujun, Xing, Ding, Zhang, Hang, Yuan, Yingchun, Ma, Peimiao, Luo, Yehui
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Volume:
40
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2015.07.056
Date:
December, 2015
File:
PDF, 1.39 MB
english, 2015
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