Mechanism for resistive switching in chalcogenide-based...

Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells

Zhuge, Fei, Li, Kang, Fu, Bing, Zhang, Hongliang, Li, Jun, Chen, Hao, Liang, Lingyan, Gao, Junhua, Cao, Hongtao, Liu, Zhimin, Luo, Hao
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Volume:
5
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.4921089
Date:
May, 2015
File:
PDF, 2.01 MB
english, 2015
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