High-temperature properties of InGaN light-emitting diodes

High-temperature properties of InGaN light-emitting diodes

Akimova, I V, Eliseev, P G, Osinski, M A
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Volume:
28
Language:
english
Journal:
Quantum Electronics
DOI:
10.1070/QE1998v028n11ABEH001370
Date:
November, 1998
File:
PDF, 235 KB
english, 1998
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