Deep level characteristics in n-GaN with inductively coupled plasma damage
Cho, H K, Khan, F A, Adesida, I, Fang, Z-Q, Look, D CVolume:
41
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/41/15/155314
Date:
August, 2008
File:
PDF, 208 KB
english, 2008