Effects of an anodic oxide passivation layer on mesa-type...

Semiconductor Science and Technology 2009 / 01 Vol. 24; Iss. 1

Effects of an anodic oxide passivation layer on mesa-type InGaAs (PIN) photodetectors

Zhang, Kefeng, Tang, Hengjing, Wu, Xiaoli, Li, Yongfu, Li, Tao, Li, Xue, Gong, Haimei
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Volume:
24
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/24/1/015008
Date:
January, 2009
File:
PDF, 195 KB
english, 2009
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