![](/img/cover-not-exists.png)
Investigation of process-induced crystal defects in Si by X-ray topography
Fabian, I, Pal, E K, Kormany, TVolume:
7
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/7/1A/031
Date:
January, 1992
File:
PDF, 494 KB
english, 1992