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High Dose Rate Effect of Focused-Ion-Beam Boron Implantation into Silicon
Tamura, Masao, Shukuri, Shoji, Ishitani, Tohru, Ichikawa, Masakazu, Doi, TakahisaVolume:
23
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.23.L417
Date:
June, 1984
File:
PDF, 478 KB
english, 1984