Raman Study on the Silicon Network of Hydrogenated...

Japanese Journal of Applied Physics 1985 / 4 Vol. 24; Iss. Part 1, No

Raman Study on the Silicon Network of Hydrogenated Amorphous Silicon Films Deposited by a Glow Discharge

Hishikawa, Yoshihiro, Watanabe, Kaneo, Tsuda, Shinya, Ohnishi, Michitoshi, Kuwano, Yukinori
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Volume:
24
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.24.385
Date:
April, 1985
File:
PDF, 570 KB
english, 1985
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