Planarized Deposition of High-Quality Silicon Dioxide Film...

Japanese Journal of Applied Physics 1990 / 12 Vol. 29; Iss. Part 2, No

Planarized Deposition of High-Quality Silicon Dioxide Film by Photoassisted Plasma CVD at 300°C Using Tetraethyl Orthosilicate

Suzuki, Nobumasa, Masu, Kazuya, Tsubouchi, Kazuo, Mikoshiba, Nobuo
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Volume:
29
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L2341
Date:
December, 1990
File:
PDF, 719 KB
english, 1990
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