Dry Etching of InGaAsP/InP Structures by Reactive Ion Beam...

Japanese Journal of Applied Physics 1990 / 12 Vol. 29; Iss. Part 2, No

Dry Etching of InGaAsP/InP Structures by Reactive Ion Beam Etching Using Chlorine and Argon

Nishibe, Tohru, Nunoue, Shin-ya
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
29
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L2449
Date:
December, 1990
File:
PDF, 573 KB
english, 1990
Conversion to is in progress
Conversion to is failed